THEORY OF GAAS-OXIDE INTERFACE STATES

被引：8

作者：

ALLEN, RE ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

关键词：

D O I：

10.1016/0038-1098(83)90900-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：379 / 381

页数：3

共 12 条

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[7] CHARGE-DENSITIES AND WAVE-FUNCTIONS OF CHALCOGENIDE DEEP IMPURITIES IN SI
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[8] SPICER WE, 1980, PHYS REV LETT, V44, P520
[9] SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110)
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[10] VOGL P, UNPUB J PHYS CHEM SO