共 21 条
- [2] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979
- [4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3545 - 3562
- [5] PHOTO-IONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (03): : 359 - 368
- [7] DEEP SULFUR-RELATED CENTERS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4212 - 4217
- [8] TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4590 - 4599
- [9] ELECTRONIC STATES OF SIMPLE-TRANSITION-METAL IMPURITIES IN SILICON [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 834 - 839