AN ION-IMPLANTED DIAMOND METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：74

作者：

ZEISSE, CR ^{[1
]}

HEWETT, CA ^{[1
]}

NGUYEN, R ^{[1
]}

ZEIDLER, JR ^{[1
]}

WILSON, RG ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

10;

D O I：

10.1109/55.119211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-type conducting layer has been formed. in a substrate of semi-insulating natural diamond (type IIa) by boron implantation. Silicon dioxide was deposited over this layer to make an insulated-gate field-effect transistor. Saturation and pinch-off were both observed at room temperature. The transconductance was 3.9-mu-S . mm-1 and the output conductance was 60 nS . mm-1. This is the first reported use of ion implantation to successfully fabricate a field-effect device in diamond.

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页码：602 / 604

页数：3

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