GAAS-MESFET ICS FOR GIGABIT LOGIC APPLICATIONS

被引:14
作者
NUZILLAT, G
PEREA, EH
BERT, G
DAMAYKAVALA, F
GLOANEC, M
PELTIER, M
NGU, TP
ARNODO, C
机构
关键词
D O I
10.1109/JSSC.1982.1051777
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:569 / 584
页数:16
相关论文
共 80 条
[11]  
CATHELIN M, 1980, OCT P I EL ENG 1, V127, P270
[12]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[13]  
CROSET M, 1980, REV TECH THOMSON, V12, P827
[14]  
DAMAYKAVALA F, 1981, SEP INT S GAAS REL C
[15]  
DAVANZO D, 1981, 3RD IEEE GAAS IC S R, P21
[16]   TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].
DELAGEBEAUDEUF, D ;
DELESCLUSE, P ;
ETIENNE, P ;
LAVIRON, M ;
CHAPLART, J ;
LINH, NT .
ELECTRONICS LETTERS, 1980, 16 (17) :667-668
[17]  
DEYHIMI I, 1980, DEC P IEDM 80 WASH
[18]  
DEYHIMY I, 1981, ELECTRON DEVIC LETT, V2, P70
[19]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[20]   GALLIUM-ARSENIDE FET LOGIC PSEUDORANDOM CODE GENERATOR [J].
DOBRATZ, BE ;
HO, N ;
KRUMM, CF ;
GREILING, PT .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) :486-490