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GAAS/(GAAL)AS DEEP ZN-DIFFUSED CHANNELED-SUBSTRATE LASER
被引:4
作者
:
CHOI, HK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
CHOI, HK
[
1
]
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WANG, S
[
1
]
机构
:
[1]
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源
:
JOURNAL OF APPLIED PHYSICS
|
1983年
/ 54卷
/ 06期
关键词
:
D O I
:
10.1063/1.332431
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3600 / 3602
页数:3
相关论文
共 13 条
[1]
CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS
AIKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
AIKI, K
NAKAMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
NAKAMURA, M
KURODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
KURODA, T
UMEDA, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
UMEDA, J
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(12)
: 649
-
651
[2]
CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS
BOTEZ, D
论文数:
0
引用数:
0
h-index:
0
BOTEZ, D
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(12)
: 2290
-
2309
[3]
NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
STREIFER, W
PELED, S
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
PELED, S
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(10)
: 734
-
736
[4]
NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUE
CHEN, CY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
CHEN, CY
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
WANG, S
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(08)
: 634
-
636
[5]
TRANSVERSE-MODE STABILIZED ALGAAS-GAAS PLANO-CONVEX WAVE-GUIDE LASER MADE BY A SINGLE-STEP LIQUID-PHASE EPITAXY
IDE, Y
论文数:
0
引用数:
0
h-index:
0
IDE, Y
FURUSE, T
论文数:
0
引用数:
0
h-index:
0
FURUSE, T
SAKUMA, I
论文数:
0
引用数:
0
h-index:
0
SAKUMA, I
NISHIDA, K
论文数:
0
引用数:
0
h-index:
0
NISHIDA, K
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(02)
: 121
-
123
[6]
MODE-STABILIZED SEPARATED MULTICLAD LAYER STRIPE GEOMETRY GAALAS DOUBLE HETEROSTRUCTURE LASER
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
TAKAGI, N
论文数:
0
引用数:
0
h-index:
0
TAKAGI, N
OHSAKA, S
论文数:
0
引用数:
0
h-index:
0
OHSAKA, S
HANAMITSU, K
论文数:
0
引用数:
0
h-index:
0
HANAMITSU, K
FUJIWARA, T
论文数:
0
引用数:
0
h-index:
0
FUJIWARA, T
TAKUSAGAWA, M
论文数:
0
引用数:
0
h-index:
0
TAKUSAGAWA, M
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 520
-
522
[7]
CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS
KIRKBY, PA
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex, London Road
KIRKBY, PA
[J].
ELECTRONICS LETTERS,
1979,
15
(25)
: 824
-
826
[8]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[9]
SHIMA K, 1982, IEEE J QUANTUM ELECT, V18, P1688, DOI 10.1109/TMTT.1982.1131308
[10]
REDUCTION OF THRESHOLD CURRENT IN GAALAS TERRACED SUBSTRATE LASERS
SUGINO, T
论文数:
0
引用数:
0
h-index:
0
SUGINO, T
ITOH, K
论文数:
0
引用数:
0
h-index:
0
ITOH, K
SHIMIZU, H
论文数:
0
引用数:
0
h-index:
0
SHIMIZU, H
WADA, M
论文数:
0
引用数:
0
h-index:
0
WADA, M
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
TERAMOTO, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 745
-
750
←
1
2
→
共 13 条
[1]
CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS
AIKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
AIKI, K
NAKAMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
NAKAMURA, M
KURODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
KURODA, T
UMEDA, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
UMEDA, J
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(12)
: 649
-
651
[2]
CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS
BOTEZ, D
论文数:
0
引用数:
0
h-index:
0
BOTEZ, D
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(12)
: 2290
-
2309
[3]
NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
STREIFER, W
PELED, S
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
PELED, S
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(10)
: 734
-
736
[4]
NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUE
CHEN, CY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
CHEN, CY
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR SERV,BERKELEY,CA 94720
WANG, S
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(08)
: 634
-
636
[5]
TRANSVERSE-MODE STABILIZED ALGAAS-GAAS PLANO-CONVEX WAVE-GUIDE LASER MADE BY A SINGLE-STEP LIQUID-PHASE EPITAXY
IDE, Y
论文数:
0
引用数:
0
h-index:
0
IDE, Y
FURUSE, T
论文数:
0
引用数:
0
h-index:
0
FURUSE, T
SAKUMA, I
论文数:
0
引用数:
0
h-index:
0
SAKUMA, I
NISHIDA, K
论文数:
0
引用数:
0
h-index:
0
NISHIDA, K
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(02)
: 121
-
123
[6]
MODE-STABILIZED SEPARATED MULTICLAD LAYER STRIPE GEOMETRY GAALAS DOUBLE HETEROSTRUCTURE LASER
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
TAKAGI, N
论文数:
0
引用数:
0
h-index:
0
TAKAGI, N
OHSAKA, S
论文数:
0
引用数:
0
h-index:
0
OHSAKA, S
HANAMITSU, K
论文数:
0
引用数:
0
h-index:
0
HANAMITSU, K
FUJIWARA, T
论文数:
0
引用数:
0
h-index:
0
FUJIWARA, T
TAKUSAGAWA, M
论文数:
0
引用数:
0
h-index:
0
TAKUSAGAWA, M
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 520
-
522
[7]
CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS
KIRKBY, PA
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex, London Road
KIRKBY, PA
[J].
ELECTRONICS LETTERS,
1979,
15
(25)
: 824
-
826
[8]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[9]
SHIMA K, 1982, IEEE J QUANTUM ELECT, V18, P1688, DOI 10.1109/TMTT.1982.1131308
[10]
REDUCTION OF THRESHOLD CURRENT IN GAALAS TERRACED SUBSTRATE LASERS
SUGINO, T
论文数:
0
引用数:
0
h-index:
0
SUGINO, T
ITOH, K
论文数:
0
引用数:
0
h-index:
0
ITOH, K
SHIMIZU, H
论文数:
0
引用数:
0
h-index:
0
SHIMIZU, H
WADA, M
论文数:
0
引用数:
0
h-index:
0
WADA, M
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
TERAMOTO, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 745
-
750
←
1
2
→