SATURATION PHOTOCONDUCTIVITY IN CDIN2S4

被引：36

作者：

CHARBONNEAU, S ^{[1
]}

FORTIN, E ^{[1
]}

ANEDDA, A ^{[1
]}

机构：

[1] UNIV CAGLIARI,DIPARTIMENTO SCI FIS,I-09100 CAGLIARI,ITALY

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.31.2326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2326 / 2329

页数：4

共 25 条

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[4] BOLTIVETS NS, 1969, SOV PHYS SEMICOND+, V2, P867
[5] OPTICAL PROPERTIES OF A QUASI-DISORDERED SEMICONDUCTOR - ZNIN2S4
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[6] SATURATION OF IMPURITY PHOTOCONDUCTIVITY IN N-GAAS WITH INTENSE YAG LASER LIGHT
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[7] Czaja W., 1970, Physik der Kondensierten Materie, V10, P299, DOI 10.1007/BF02422849
[8] PHOTOLUMINESCENCE OF CDIN2S4 AND MIXED CRYSTALS WITH IN2S3 AS RELATED TO THEIR STRUCTURAL PROPERTIES
CZAJA, W
KRAUSBAUER, L
[J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 191 - +
[9] Damaskin I. A., 1973, Opto-Electronics, V5, P405, DOI 10.1007/BF01418075
[10] TRANSPORT PROPERTIES OF CDIN2S4 SINGLE-CRYSTALS
ENDO, S
IRIE, T
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