INVESTIGATION OF INP SURFACE UNDER ARSENIC PRESSURE USING RHEED-TRAXS

被引：8

作者：

WATANABE, A ^{[1
]}

ISU, T ^{[1
]}

HATA, M ^{[1
]}

KATAYAMA, Y ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90770-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The surface of InP under arsenic pressure is investigated by reflection high-energy electron diffraction total reflection angle X-ray spectroscopy (RHEED-TRAXS). A Si(Li) solid-state detector with a thin parylene window is used as an X-ray detector. The sensitivities of Ga L-alpha and As L-alpha lines on an InP wafer were better than 1 monolayer (ML). From the surface of the InP wafer under arsenic pressure at 470-degrees-C, 2 ML of As were detected before cleaning the InP substrate surface, and 3 ML of As at 520-degrees-C within 10 min. It was considered that a few ML of InAs were grown while cleaning the InP surface under arsenic pressure, replacing phosphorus by arsenic.

引用

页码：371 / 374

页数：4

共 4 条

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[3] COMBINED RHEED-AES STUDY OF THE THERMAL-TREATMENT OF (001) GAAS SURFACE PRIOR TO MBE GROWTH
LAURENCE, G
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[4] SHIMIZU S, 1989, 11TH P INT VAC C 7TH

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