HIGH-RESOLUTION REAL-TIME X-RAY TOPOGRAPHY OF DISLOCATION GENERATION IN SILICON

被引：7

作者：

CHANG, SL ^{[1
]}

QUEISSER, HJ ^{[1
]}

BAUMGART, H ^{[1
]}

HAGEN, W ^{[1
]}

HARTMANN, W ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1982年 / 46卷 / 06期

关键词：

D O I：

10.1080/01418618208236946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1009 / 1013

页数：5

共 12 条

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[9] CROSS SLIP OF SINGLE DISSOCIATED SCREW DISLOCATIONS IN SILICON AND GERMANIUM [J].

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[10] STRAINING APPARATUS FOR DYNAMIC OBSERVATION BY X-RAY TOPOGRAPHY [J].

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