HIGH-TEMPERATURE REAL-TIME STUDIES OF LATTICE STRAINS INDUCED BY LOCALIZED OXIDATION OF SILICON

被引：7

作者：

FRANZ, G ^{[1
]}

HARTMANN, W ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER

来源：

APPLIED PHYSICS | 1980年 / 23卷 / 01期

关键词：

D O I：

10.1007/BF00899578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：107 / 112

页数：6

共 17 条

[1] X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .3. INTENSITY DISTRIBUTION [J].

ANDO, Y ;

PATEL, JR ;

KATO, N .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4405-4412

[2]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[3] ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J].

BLECH, IA ;

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2913-&

[4] MEASURING SMALL-AREA SI-SIO-2 INTERFACE STRESS WITH SEM [J].

CONRU, HW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2079-2081

[5] STRESS IN THERMAL SIO2 DURING GROWTH [J].

EERNISSE, FP .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :8-10

[6]

Hartmann W., 1977, X-ray optics. Applications to solids, P191

[7] HIGH-RESOLUTION DIRECT-DISPLAY X-RAY TOPOGRAPHY [J].

HARTMANN, W ;

MARKEWITZ, G ;

RETTENMAIER, U ;

QUEISSER, HJ .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :308-309

[8]

HARTMANN W, 1979, CHARACTERIZATION CRY

[9]

HEARN EW, 1977, ADV XRAY ANAL, V20, P273

[10] EFFECTS OF OXIDE ISOLATION ON PROPAGATION DELAY IN INTEGRATED INJECTION LOGIC (I2L) [J].

IIZUKA, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) :547-552

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