THE ELECTRONIC-STRUCTURE AND STABILITY OF LOCALIZED DEFECTS IN SEMICONDUCTORS .2. VACANCIES IN SILICON, GALLIUM-PHOSPHIDE AND ZINC SELENIDE

被引：19

作者：

KIRTON, MJ ^{[1
]}

BANKS, PW ^{[1
]}

LIAN, LD ^{[1
]}

JAROS, M ^{[1
]}

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT THEORET PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 14期

关键词：

D O I：

10.1088/0022-3719/17/14/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2487 / 2503

页数：17

共 17 条

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[2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON
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[3] COLOUR CENTRES IN IRRADIATED DIAMONDS .1.
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12): : L337 - L343
[5] Jaros M, 1982, DEEP LEVELS SEMICOND
[6] ELECTRONIC SPIN OF THE GA VACANCY IN GAP
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STAUSS, GH
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (17) : 1281 - 1284
[7] IDENTIFICATION OF ISOLATED GA VACANCY IN ELECTRON-IRRADIATED GAP THROUGH EPR
KENNEDY, TA
WILSEY, ND
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (14) : 977 - 980
[8] ELECTRON-PARAMAGNETIC RESONANCE OF ELECTRON-IRRADIATED GAP
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WILSEY, ND
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6585 - 6591
[9] THE NATURE OF DANGLING BONDS AT LINE DEFECTS IN COVALENT SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (15): : 2099 - 2115
[10] KIRTON MJ, 1982, THESIS U NEWCASTLE U