HYDROGENATION BY ION-IMPLANTATION FOR SCALED SOI/PMOS TRANSISTORS

[1] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 604 - 606

[2] GAT A, 1978, APPL PHYS LETT, V33, P15

[3] ISLAND-EDGE EFFECTS OF TRANSISTORS FABRICATED IN LARGE-AREA LASER MICRO-ZONE CRYSTALLIZED SI ON INSULATOR [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) : 280 - 282

[4] LU NCC, 1981, THESIS STANFORD U ST

[5] MANDURAH MM, 1981, THESIS STANFORD U ST

[6] ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 730 - 738

[7] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1050 - 1055

[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254

[9] SHICHIJO H, 1984, DEC IEDM SAN FRANC, P228

[10] SHICHIJO H, 1983, DEC IEDM WASH, P202

[1] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 604 - 606

[2] GAT A, 1978, APPL PHYS LETT, V33, P15

[3] ISLAND-EDGE EFFECTS OF TRANSISTORS FABRICATED IN LARGE-AREA LASER MICRO-ZONE CRYSTALLIZED SI ON INSULATOR [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) : 280 - 282

[4] LU NCC, 1981, THESIS STANFORD U ST

[5] MANDURAH MM, 1981, THESIS STANFORD U ST

[6] ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 730 - 738

[7] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1050 - 1055

[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254

[9] SHICHIJO H, 1984, DEC IEDM SAN FRANC, P228

[10] SHICHIJO H, 1983, DEC IEDM WASH, P202