SI OXYHYDRIDES ON STAIN-ETCHED POROUS SI THIN-FILMS AND CORRELATION WITH CRYSTALLINITY AND PHOTOLUMINESCENCE

被引：27

作者：

STECKL, AJ ^{[1
]}

XU, J ^{[1
]}

MOGUL, HC ^{[1
]}

PROKES, SM ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 05期

关键词：

D O I：

10.1149/1.2048652

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Porous Si has been fabricated from amorphous and polycrystalline Si films by stain-etching in HF:HNO3:H2O. Infrared transmission measurements have revealed an absorption peak at 880-890 cm(-1) only in crystalline porous Si samples. This peak is probably due to an SIH, bending mode in the presence of oxygen. Similarly, only crystalline PoSi films exhibit visible (similar to 650-670 nm) photoluminescence under UV excitation. Amorphous PoSi samples do not luminesce even after very long etch times, in spite of greatly increased porosity. Therefore, it appears that there exists a unique correlation between the presence of crystallinity in the starting Si film and the presence of surface oxyhydrides and photoluminescence after stain-etching.

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页码：L69 / L71

页数：3

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