ROOM-TEMPERATURE DEPOSITION OF SILICON-NITRIDE FILMS USING VERY LOW-FREQUENCY (50HZ) PLASMA CVD

被引：23

作者：

SHIMOZUMA, M

KITAMORI, K

OHNO, H

HASEGAWA, H

TAGASHIRA, H

机构：

[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

[2] HOKKAIDO INST TECHNOL,DEPT IND ENGN,SAPPORO 06124,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 05期

关键词：

D O I：

10.1007/BF02654026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：573 / 586

页数：14

共 17 条

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