LATERAL CHARGE SPREADING-INDUCED EFFECTS WITHIN A SHALLOW JUNCTION BIPOLAR TECHNOLOGY

被引：1

作者：

HEMMERT, RS

PAN, LS

ALTIERI, J

WALSH, JP

机构：

[1] IBM CORP,DIV GEN PROD,SAN JOSE,CA 95193

[2] IBM CORP,DIV GEN TECHNOL,ENDICOTT,NY 13760

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.333101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：463 / 470

页数：8

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