SILICON METALLIZATION BY SYNCHROTRON-RADIATION-INDUCED W(CO)6 SURFACE-REACTION

被引：9

作者：

ZANONI, R

PIANCASTELLI, MN

MARSI, M

MARGARITONDO, G

机构：

[1] UNIV ROMA TOR VERGATA 2,DIPARTIMENTO SCI & TECNOL CHIM,I-00173 ROME,ITALY

[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[3] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 76卷 / 11期

关键词：

Semiconducting Silicon;

D O I：

10.1016/0038-1098(90)90567-U

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We produced metal overlayers on cleaved Si(111) at low temperature, by exposing to white synchrotron radiation in situ molecularly adsorbed W(CO)6. We show for the first time that the overlayer produced at low temperature remains stable at room temperature, thereby enhancing the possibility of practical use of this class of processes. © 1990.

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页码：1239 / 1241

页数：3

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