FORMATION OF WSI2 AT THE SI-W(110) INTERFACE

被引:13
作者
WENG, SL [1 ]
机构
[1] BROOKHAVEN NATL LAB, DEPT PHYS, UPTON, NY 11973 USA
关键词
D O I
10.1103/PhysRevB.29.2363
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:2363 / 2365
页数:3
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