SECONDARY ION YIELD VARIATIONS DUE TO CESIUM IMPLANTATION IN SILICON

[1] Andersen CA., 1970, INT J MASS SPECTROM, V3, P413, DOI [10.1016/0020-7381(70)80001-8, DOI 10.1016/0020-7381(70)80001-8]

[2] Bentz B. L., 1982, Secondary Ion Mass Spectrometry. SIMS III. Proceedings of the Third International Conference, P30

[3] BERNHEIM M, 1982, SIMS, V3, P151

[4] COMPARATIVE EFFECTS OF OXYGEN ON ION EMISSION AND SURFACE POTENTIAL OF METALS [J]. SURFACE SCIENCE, 1973, 40 (03) : 708 - 714

[5] EMISSION OF NEGATIVE IONS FROM METAL SURFACES BOMBARDED BY POSITIVE CESIUM IONS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (12) : 3523 - &

[6] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 660 - 663

[7] COMPARISON OF THE RETENTION CHARACTERISTICS OF LOW-ENERGY XENON AND CESIUM IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 235 - 240

[8] SECONDARY-ION EMISSION PROBABILITY IN SPUTTERING [J]. PHYSICAL REVIEW B, 1979, 19 (11): : 5661 - 5665

[9] MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 31 - 40

[10] EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1977, 49 (13) : 2023 - 2030

[1] Andersen CA., 1970, INT J MASS SPECTROM, V3, P413, DOI [10.1016/0020-7381(70)80001-8, DOI 10.1016/0020-7381(70)80001-8]

[2] Bentz B. L., 1982, Secondary Ion Mass Spectrometry. SIMS III. Proceedings of the Third International Conference, P30

[3] BERNHEIM M, 1982, SIMS, V3, P151

[4] COMPARATIVE EFFECTS OF OXYGEN ON ION EMISSION AND SURFACE POTENTIAL OF METALS [J]. SURFACE SCIENCE, 1973, 40 (03) : 708 - 714

[5] EMISSION OF NEGATIVE IONS FROM METAL SURFACES BOMBARDED BY POSITIVE CESIUM IONS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (12) : 3523 - &

[6] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 660 - 663

[7] COMPARISON OF THE RETENTION CHARACTERISTICS OF LOW-ENERGY XENON AND CESIUM IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 235 - 240

[8] SECONDARY-ION EMISSION PROBABILITY IN SPUTTERING [J]. PHYSICAL REVIEW B, 1979, 19 (11): : 5661 - 5665

[9] MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 31 - 40

[10] EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1977, 49 (13) : 2023 - 2030