THE ACCOMMODATION OF MISMATCH AT EPITAXIAL INTERFACES IN SEMICONDUCTORS - SOME CONTRIBUTIONS FROM HREM

被引：15

作者：

HUTCHISON, JL

机构：

来源：

ULTRAMICROSCOPY | 1985年 / 18卷 / 1-4期

关键词：

D O I：

10.1016/0304-3991(85)90152-4

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：349 / 354

页数：6

共 16 条

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[2] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

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SPENCE, JCH .

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[3] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE [J].

CHERNS, D ;

HETHERINGTON, CJD ;

HUMPHREYS, CJ .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01) :165-177

[4] IODINE ION MILLING OF INDIUM-CONTAINING COMPOUND SEMICONDUCTORS [J].

CHEW, NG ;

CULLIS, AG .

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[5]

CHEW NG, UNPUB

[6] FORMATION AND ELIMINATION OF SURFACE ION MILLING DEFECTS IN CADMIUM TELLURIDE, ZINC-SULFIDE AND ZINC SELENIDE [J].

CULLIS, AG ;

CHEW, NG ;

HUTCHISON, JL .

ULTRAMICROSCOPY, 1985, 17 (03) :203-211

[7]

GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[8] HIGH RESOLUTION ELECTRON MICROSCOPY OF INTERFACES BETWEEN EPITAXIAL THIN FILMS AND SEMICONDUCTORS. [J].

Gibson, J.M. .

Ultramicroscopy, 1984, 14 (1-2) :1-10

[9]

GRIFFITH RH, UNPUB

[10]

HETHERINGTON CJD, 1985, MATER RES SOC S P, V37, P41

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