MEASUREMENT OF MOSFET CHANNEL POTENTIAL PROFILE

被引：3

作者：

YEOW, YT ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

Electric Measurements;

D O I：

10.1109/16.8816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for the extraction of the channel potential of a MOSFET from the gate-to-drain capacitance is presented. The method is demonstrated on two devices. Comparison is made between experimental results and numerical simulation. It is shown that a potential drop within the drain diffusion would reduce the actual voltage drop across the channel. A technique to account for this voltage drop is also given.

引用

页码：2368 / 2372

页数：5

共 4 条

[1] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J].