TWO-DIMENSIONAL ANALYTICAL MODELING OF THRESHOLD VOLTAGES OF SHORT-CHANNEL MOSFETS

被引：34

作者：

POOLE, DR

KWONG, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 11期

关键词：

D O I：

10.1109/EDL.1984.25981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：443 / 446

页数：4

共 11 条

[1] SIMPLE APPROACH FOR ACCURATELY MODELING THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSTS [J].

BANDY, WR ;

KOKALIS, DP .

SOLID-STATE ELECTRONICS, 1977, 20 (08) :675-680

[2]

DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436

[3] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].

GREENFIELD, JA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532

[4] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J].

LEE, HS .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1407-1417

[5]

MASUDA H, 1977, T IECE JAPAN C, V60, P205

[6] SHORT-CHANNEL MOST THRESHOLD VOLTAGE MODEL [J].

RATNAKUMAR, KN ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :937-948

[7] SUB-THRESHOLD CONDUCTION IN MOSFETS [J].

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :337-350

[8] ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS [J].

TOYABE, T ;

ASAI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :453-461

[9] SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].

TROUTMAN, RR ;

CHAKRAVARTI, SN .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06) :659-665

[10] DEVICE CHARACTERISTICS OF SHORT-CHANNEL AND NARROW-WIDTH MOSFETS [J].

WANG, PP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) :779-786

← 1 2 →