ELECTRONIC STATES OF (001) AND (311) ALAS/GAAS QUANTUM-WELLS

被引：8

作者：

CONTRERASSOLORIO, DA ^{[1
]}

VELASCO, VR ^{[1
]}

GARCIAMOLINER, F ^{[1
]}

机构：

[1] CSIC, INST CIENCIA MAT, E-28006 MADRID, SPAIN

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.48.12319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic states of (001) and (31 1) AlAs/GaAs quantum wells at the kappa= (0, 0), point is studied for 2 less-than-or-equal-to n less-than-or-equal-to 20, n being the number of principal layers of GaAs in the heterostructure. The calculations are performed by using an sp3 s* empirical tight-binding model together with the surface Green-function matching method. The evolution of the energy for the different bound states versus the variation of n and the orbital character of the bound states are studied for both (001) and (311) quantum wells.

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收藏

页码：12319 / 12322

页数：4

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