DEEP LEVELS INTRODUCED INTO SILICON DURING HYDROGEN PLASMA ANNEALING

被引：19

作者：

HWANG, JM ^{[1
]}

SCHRODER, DK ^{[1
]}

BITER, WJ ^{[1
]}

机构：

[1] SOHIO RES CTR,CLEVELAND,OH 44128

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5275 / 5278

页数：4

共 30 条

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