PHOTOLUMINESCENCE OF SIGE/SI QUANTUM-WELLS PREPARED BY LPCVD

被引：11

作者：

VESCAN, L ^{[1
]}

SCHMIDT, K ^{[1
]}

DIEKER, C ^{[1
]}

TANG, HP ^{[1
]}

VESCAN, T ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] ECOLE POLYTECH, LAUSANNE, SWITZERLAND

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90026-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed study is presented of the photoluminescence of quantum well structures with strained Si0.7Ge0.3/Si grown at 700-degrees-C by LPCVD. At low temperatures, sharp quantum well exciton lines and their TO(Si-Si) and TA replicas are observed. For well thicknesses < 2 nm, a doublet of no-phonon bound excitons is observed which might be due to monolayer variations in the SiGe thickness. Above 2 nm, the onset of three dimensional growth (islands) leads to the broadening of the photoluminescence lines. From the energy of the no-phonon exciton line, a valence band offset of 0.27 eV and an effective hole mass of 0.25 m0 were estimated.

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页码：5 / 9

页数：5

相关论文

共 9 条

[1] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS [J].

DUTARTRE, D ;

BREMOND, G ;

SOUIFI, A ;

BENYATTOU, T .

PHYSICAL REVIEW B, 1991, 44 (20) :11525-11527

[2] PHOTO-LUMINESCENCE OF SI-RICH SI-GE ALLOYS [J].

MITCHARD, GS ;

MCGILL, TC .

PHYSICAL REVIEW B, 1982, 25 (08) :5351-5363

[3] WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE OF EXCITONS CONFINED IN STRAINED SI1-XGEX QUANTUM-WELLS [J].

STURM, JC ;

MANOHARAN, H ;

LENCHYSHYN, LC ;

THEWALT, MLW ;

ROWELL, NL ;

NOEL, JP ;

HOUGHTON, DC .

PHYSICAL REVIEW LETTERS, 1991, 66 (10) :1362-1365

[4] EQUILIBRIUM THERMODYNAMIC ANALYSIS OF THE SI-GE-CL-H SYSTEM FOR ATMOSPHERIC AND LOW-PRESSURE CVD OF SI1-XGEX [J].

TANG, HP ;

VESCAN, L ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1992, 116 (1-2) :1-14

[5] NEAR-BAND-GAP PHOTOLUMINESCENCE OF SI1-XGEX ALLOYS GROWN ON SI(100) BY MOLECULAR-BEAM EPITAXY [J].

TERASHIMA, K ;

TAJIMA, M ;

TATSUMI, T .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1925-1927

[6] OPTICAL AND STRUCTURAL INVESTIGATION OF SIGE/SI QUANTUM-WELLS [J].

VESCAN, L ;

HARTMANN, A ;

SCHMIDT, K ;

DIEKER, C ;

LUTH, H ;

JAGER, W .

APPLIED PHYSICS LETTERS, 1992, 60 (18) :2183-2185

[7]

VESCAN L, 1992, IN PRESS MATERIAL SO, V263

[8] NEAR-BAND-GAP PHOTOLUMINESCENCE OF SI-GE ALLOYS [J].

WEBER, J ;

ALONSO, MI .

PHYSICAL REVIEW B, 1989, 40 (08) :5683-5693

[9] PHOTOLUMINESCENCE FROM ELECTRON-HOLE PLASMAS CONFINED IN SI/SI1-XGEX/SI QUANTUM-WELLS [J].

XIAO, X ;

LIU, CW ;

STURM, JC ;

LENCHYSHYN, LC ;

THEWALT, MLW .

APPLIED PHYSICS LETTERS, 1992, 60 (14) :1720-1722