SUPERCONDUCTIVITY OF BI SYSTEM THIN-FILMS FORMED BY CONSECUTIVELY SPUTTERING 3 PB-DOPED TARGETS OF SLIGHTLY DIFFERENT COMPOSITIONS

被引：9

作者：

KURODA, K ^{[1
]}

KOJIMA, K ^{[1
]}

TANIOKU, M ^{[1
]}

YOKOYAMA, K ^{[1
]}

HAMANAKA, K ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,MAT & ELECTR DEVICE LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

As-grown superconductivity; Bi(Pb)SrCaCuO; Crystal structure; In situ annealing; Multitargets; Sputtering; Superconductor; Thin films;

D O I：

10.1143/JJAP.29.L291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three lightly Pb-doped targets: Bi2.4Pb0.6Sr2Ca2Cu3Ox, Bi1.6Pb0.4Sr3Ca3Cu3Oxand Bi1.6Pb0.4Sr2Ca2Cu4.5Ox. To improve the superconductivity of the as-grown films, the films were kept in a sputtering chamber after deposition. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed zero resistivity at 83 K and a resistivity drop at 115 K. The critical current density of the film was 4×105A/cm2at 77 K and 1×107A/cm2at 52 K. © 1990 IOP Publishing Ltd.

引用

页码：L291 / L293

页数：3

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