RAMAN STUDIES OF INTERNAL-STRESS AND CRYSTALLINITY OF PULSE-LASER-IRRADIATED SILICON ON SAPPHIRE (SOS) IN RELATION TO HALL-MOBILITY

被引：9

作者：

NAKAMURA, M

KOBAYASHI, Y

USAMI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 06期

关键词：

D O I：

10.1143/JJAP.23.687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：687 / 694

页数：8

共 28 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[2]

BOSCH MA, 1982, APPL PHYS LETT, V40, P166, DOI 10.1063/1.93030

[3] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

CERDEIRA, F ;

BUCHENAUER, CJ ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+

[4] EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI [J].

CHANDRASEKHAR, M ;

RENUCCI, JB ;

CARDONA, M .

PHYSICAL REVIEW B, 1978, 17 (04) :1623-1633

[5] THE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON [J].

CULLEN, GW ;

ABRAHAMS, MS ;

CORBOY, JF ;

DUFFY, MT ;

HAM, WE ;

JASTRZEBSKI, L ;

SMITH, RT ;

BLUMENFELD, M ;

HARBEKE, G ;

LAGOWSKI, J .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :281-295

[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[7]

Driscoll W. G., 1978, HDB OPTICS, P7

[8] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

DUMIN, DJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1909-&

[9] CARRIER TRANSPORT IN THIN SILICON FILMS [J].

DUMIN, DJ ;

ROBINSON, PH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2759-&

[10] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

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