EFFECTS OF DEFECTS ON THE ELECTRONIC-STRUCTURE OF ION-IRRADIATED GRAPHITE

被引：13

作者：

MANSOUR, A

OELHAFEN, P

机构：

[1] Institut für Physik der Universität Basel, Basel, CH-4056

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 05期

关键词：

D O I：

10.1007/BF00332433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of N+ and Ne+ ions impinging on a graphite target are studied by ultraviolet photoelectron spectroscopy. Changes in the valence band of the N+-irradiated graphite surface are found to be inherently different from the Ne+-ion-induced structural modification. They reveal a build-up of additional pi-defect states at the top of the band, and confirm what appears to be a distinct character of the influence of nitrogen on an amorphous carbon matrix.

引用

页码：437 / 440

页数：4

共 17 条

[11]

SCHNATTERLY S, COMMUNICATION

[12] DISPLACEMENT ENERGY THRESHOLD FOR NE+ IRRADIATION OF GRAPHITE [J].