CONDUCTION-DIFFUSION THEORY OF SEMICONDUCTOR JUNCTIONS

[1] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &

[2] SWITCH-ON TRANSIENTS IN P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 2056 - &

[3] ABRUPT VS DIFFUSED SEMICONDUCTOR JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3137 - &

[4] JUNCTION BOUNDARY CONDITIONS FOR HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3350 - &

[5] CHANG YF, UNPUBLISHED

[6] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[7] Fletcher N.H., 1957, J ELECT, V2, P609, DOI [10.1080/00207215708937064, DOI 10.1080/00207215708937064]

[8] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[9] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[10] CHARACTERISTICS OF JUNCTIONS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) : 764 - 770

[1] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &

[2] SWITCH-ON TRANSIENTS IN P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 2056 - &

[3] ABRUPT VS DIFFUSED SEMICONDUCTOR JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3137 - &

[4] JUNCTION BOUNDARY CONDITIONS FOR HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3350 - &

[5] CHANG YF, UNPUBLISHED

[6] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[7] Fletcher N.H., 1957, J ELECT, V2, P609, DOI [10.1080/00207215708937064, DOI 10.1080/00207215708937064]

[8] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[9] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[10] CHARACTERISTICS OF JUNCTIONS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) : 764 - 770