SI DEPTH PROFILES IN FOCUSED-ION-BEAM-IMPLANTED GAAS

被引：8

作者：

BAMBA, Y

MIYAUCHI, E

NAKAJIMA, M

ARIMOTO, H

TAKAMORI, A

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 01期

关键词：

D O I：

10.1143/JJAP.24.L6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L6 / L8

页数：3

共 16 条

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[8] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

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[10] LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM [J].

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UTSUMI, T .

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