KINETICS OF LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS-GERMANIUM FILMS

被引:27
作者
BOSTANJOGLO, O
ENDRUSCHAT, E
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 91卷 / 01期
关键词
D O I
10.1002/pssa.2210910103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:17 / 28
页数:12
相关论文
共 26 条
[1]   HIGH-SENSITIVITY SILICIDE FILMS FOR OPTICAL-RECORDING [J].
AHN, KY ;
DISTEFANO, TH ;
HERD, SR ;
MAZZEO, NJ ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6360-6364
[2]   LASER EPITAXY OF MATERIALS FOR ELECTRONICS [J].
ALEKSANDROV, LN .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1984, 9 (3-4) :227-262
[3]   FORMATION OF SEMICONDUCTOR EPITAXIAL-FILMS BY PULSE HEATING CRYSTALLIZATION OR REGROWTH [J].
ALEKSANDROV, LN .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01) :179-190
[4]  
BAERI P, 1982, LASER ANNEALING SEMI, P93
[5]  
BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1
[6]   TIME-RESOLVED TEM OF PULSED CRYSTALLIZATION OF AMORPHOUS SI AND GE FILMS [J].
BOSTANJOGLO, O .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02) :473-481
[7]  
BOSTANJOGLO O, 1984, PHYS STATUS SOLIDI A, V82, pK1, DOI 10.1002/pssa.2210820142
[8]  
BOSTANJOGLO O, 1984, P INT C ENERGY PULSE
[9]  
Chopra K.L., 1969, THIN FILMS PHENOMENA, P844
[10]   LASER GENERATION OF HIGH-AMPLITUDE STRESS WAVES IN MATERIALS [J].
FAIRAND, BP ;
CLAUER, AH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1497-1502