PLASMA-ETCHING IN A MULTIPOLAR DISCHARGE

被引：50

作者：

WICKER, TE ^{[1
]}

MANTEI, TD ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,CINCINNATI,OH 45221

来源：

关键词：

D O I：

10.1063/1.334484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1638 / 1647

页数：10

共 31 条

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[2] BRUCE RH, 1983, J ELECTROCHEM SOC, V129, P393
[3] Chapman B. N., 1979, IBM Technical Disclosure Bulletin, V21, P5006
[4] Chapman B. N., 1980, GLOW DISCHARGE PROCE, P143
[5] Chen F F, 1965, PLASMA DIAGNOSTIC TE, P113
[6] CLEMENTS RM, 1978, J VAC SCI TECHNOL, V15, P193, DOI 10.1116/1.569453
[7] Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856
[8] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS
DONNELLY, VM
FLAMM, DL
DAUTREMONTSMITH, WC
WERDER, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252
[9] SILANE DISSOCIATION MECHANISMS AND THIN-FILM FORMATION IN A LOW-PRESSURE MULTIPOLE DC DISCHARGE
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LLORET, A
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 646 - 648
[10] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]