THERMAL-ANALYSIS OF THE DOUBLE-CRUCIBLE METHOD IN CONTINUOUS SILICON CZOCHRALSKI PROCESSING .2. NUMERICAL-ANALYSIS

被引:7
作者
ONO, N
KIDA, M
ARAI, Y
SAHIRA, K
机构
[1] Central Research Institute, Mitsubishi Materials Corporation, Omiya
关键词
D O I
10.1149/1.2220773
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Numerical simulations were performed for the melt temperature and convection in a double-crucible method. The k-epsilon turbulent flow model was applied and its results were compared to the experimental data. The calculation using the k-epsilon model converged successfully to a stable solution, while that with the laminar flow model did not. By the application of the k-epsilon mode, we could simulate the temperature gradient in the thickness of the inner quartz crucible and the forced convection under the crystal. Moreover, the conclusion that the time-averaged isotherms were not much deformed was investigated from the model.
引用
收藏
页码:2106 / 2111
页数:6
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