TURBULENT HEAT-TRANSFER THROUGH THE MELT IN SILICON CZOCHRALSKI GROWTH

The effects of crucible rotation rate on the melt temperature are measured in a production scale Si Czochralski puller in order to examine a k-epsilon model of turbulence as a heat transfer model. The experimental results show that (1) the time-averaged temperature of melt surface decreases by the order of 10 K with increasing crucible rotation rate from 2 to 10 rpm and (2) the melt temperature fluctuates with the magnitude of 10-20 K peak-to-peak. The analytical results based on the k-epsilon model reproduce the nature of experimental results. The use of the turbulence model is reasonable for thermal modeling of Si Czochralski growth.