ANALYSIS OF NONEXPONENTIAL THERMALLY STIMULATED CURRENTS FOR HEAVILY-DOPED SILICON DIODES

The general kinetics of majority carriers released by a deep trap inside silicon pn junctions during a TSC analysis are discussed. A numerical procedure is presented which takes into account both the Debye tail of free carriers penetrating inside the depletion layer and the carrier recapture by traps. Calculations are carried out even for trap concentrations much higher than the shallow dopant one, when the trap occupancy decay during the heating scan may not be considered as an exponential. The potential function is obtained solving the Poisson equation and the dependence on the temperature of the depletion depth is derived. Comparison between this procedure and the standard one taking into account only the emission of carriers from the traps has been carried out.