ELECTRONIC AND ATOMIC-STRUCTURE OF AG-SI(111) AND AG-GE(111)

被引：17

作者：

LELAY, G ^{[1
]}

机构：

[1] UNIV AIX MARSEILLE 1,UER PHYS,F-13331 MARSEILLE 3,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：354 / 360

页数：7

共 45 条

[1] REACTIVE GERMANIUM TRANSITION-METAL INTERFACES INVESTIGATED WITH SYNCHROTRON RADIATION PHOTOEMISSION - GE/NI AND GE/PD
ABBATI, I
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[J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 243 - 249
[2] INTERACTION OF OXYGEN WITH SILICON D-METAL INTERFACES - A PHOTOEMISSION INVESTIGATION
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LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 409 - 412
[3] ADSORPTION SITES AND RELATIVE STABILITIES OF THE 3X1 AND SQUARE-ROOT-3 PHASES OF AG ON SI(111)
BARONE, V
DELRE, G
LELAY, G
KERN, R
[J]. SURFACE SCIENCE, 1980, 99 (01) : 223 - 232
[4] RECENT ADVANCES IN EPITAXY
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[J]. THIN SOLID FILMS, 1972, 12 (01) : 167 - +
[5] DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111)
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KERN, R
[J]. SURFACE SCIENCE, 1979, 85 (02) : 471 - 492
[6] ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111)
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CHEN, P
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22): : 3313 - 3319
[7] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG
BOLMONT, D
CHEN, P
SEBENNE, CA
PROIX, F
[J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559
[8] CROS A, 1982, SURF SCI, V116, pL232, DOI 10.1016/0039-6028(82)90354-5
[9] CATALYTIC ACTION OF GOLD ATOMS ON THE OXIDATION OF SI(111) SURFACES
CROS, A
DERRIEN, J
SALVAN, F
[J]. SURFACE SCIENCE, 1981, 110 (02) : 471 - 490
[10] CROS A, 1981, SURF SCI, V103, pL109, DOI 10.1016/0039-6028(81)90094-7

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