REACTIVE GERMANIUM TRANSITION-METAL INTERFACES INVESTIGATED WITH SYNCHROTRON RADIATION PHOTOEMISSION - GE/NI AND GE/PD

被引：7

作者：

ABBATI, I ^{[1
]}

ROSSI, G ^{[1
]}

BRAICOVICH, L ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1016/0378-5963(81)90040-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：243 / 249

页数：7

共 19 条

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[2] THE SI(111)-PD INTERFACE - SPECTROSCOPIC EVIDENCE OF CHEMICAL PROCESSES AT LIQUID-NITROGEN TEMPERATURE
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[6] BISI O, COMMUNICATION
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[8] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
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[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
[9] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE
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[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (02) : 120 - 124
[10] SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 657 - 660