ELECTROREFLECTANCE MEASUREMENTS OF MELT-DOPED AND ION-IMPLANTED GAAS

被引：4

作者：

ANDERSON, WJ ^{[1
]}

DOUGLASS, CA ^{[1
]}

PARK, YS ^{[1
]}

机构：

[1] AEROSP RES LABS,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.322184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3870 / 3875

页数：6

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[21] FLATBAND ELECTROREFLECTANCE OF GALLIUM-ARSENIDE .1. EXPERIMENTAL RESULTS
POND, SF
HANDLER, P
[J]. PHYSICAL REVIEW B, 1972, 6 (06): : 2248 - &
[22] CONCENTRATION-DEPENDENCE OF REFRACTIVE-INDEX FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.2 AND 1.8 EV
SELL, DD
CASEY, HC
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2650 - 2657
[23] ELECTROREFLECTANCE STUDIES IN GAAS
SERAPHIN, BO
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 721 - &
[24] DETERMINATION OF SEMICONDUCTOR SURFACE PARAMETERS FROM ELECTROREFLECTANCE STUDIES
SERAPHIN, BO
[J]. SURFACE SCIENCE, 1967, 8 (04) : 399 - &
[25] FIELD EFFECT OF REFLECTIVITY IN GERMANIUM
SERAPHIN, BO
HESS, RB
BOTTKA, N
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2242 - &
[26] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM
SERAPHIN, BO
HESS, RB
[J]. PHYSICAL REVIEW LETTERS, 1965, 14 (05) : 138 - &
[27] SERAPHIN BO, 1964, 7TH P INT C PHYS SEM, P165
[28] FAR-INFRARED DONOR ABSORPTION AND PHOTOCONDUCTIVITY IN EPITAXIAL N-TYPE GAAS
SUMMERS, CJ
DINGLE, R
HILL, DE
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1603 - &
[29] ELECTROREFLECTANCE OF IMPURITIES IN GAAS - MANGANESE SILICON AND CADMIUM
WILLIAMS, EW
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (07) : 541 - &
[30] ELECTROREFLECTANCE STUDIES OF INAS GAAS AND (GA,IN)AS ALLOYS
WILLIAMS, EW
REHN, V
[J]. PHYSICAL REVIEW, 1968, 172 (03): : 798 - &