ROOM-TEMPERATURE OXIDATION OF ION BOMBARDED SILICON

[1] ASHOK S, 1984, APPL PHYS LETT, V45, P431, DOI 10.1063/1.95247

[2] CHOUIYACK A, 1984, THESIS STRASBOURG

[3] CHOUIYAKH A, 1984, THESIS STRASBOURG

[4] GROWTH AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE CONTACTS ON DRY-ETCHED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1063 - 1069

[5] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[6] LONER T, 1981, NUCL INSTR METHODS, V182, P591

[7] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE [J]. SURFACE SCIENCE, 1972, 30 (01) : 91 - &

[8] Meyer O., 1970, Radiation Effects, V3, P139, DOI 10.1080/00337577008235627

[9] MEZEY G, 1977, ION IMPLANTATION SEM, P49

[10] MOTT NF, COMMUNICATION

[1] ASHOK S, 1984, APPL PHYS LETT, V45, P431, DOI 10.1063/1.95247

[2] CHOUIYACK A, 1984, THESIS STRASBOURG

[3] CHOUIYAKH A, 1984, THESIS STRASBOURG

[4] GROWTH AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE CONTACTS ON DRY-ETCHED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1063 - 1069

[5] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[6] LONER T, 1981, NUCL INSTR METHODS, V182, P591

[7] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE [J]. SURFACE SCIENCE, 1972, 30 (01) : 91 - &

[8] Meyer O., 1970, Radiation Effects, V3, P139, DOI 10.1080/00337577008235627

[9] MEZEY G, 1977, ION IMPLANTATION SEM, P49

[10] MOTT NF, COMMUNICATION