ROOM-TEMPERATURE OXIDATION OF ION BOMBARDED SILICON

被引：6

作者：

PONPON, JP

机构：

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90967-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：687 / 694

页数：8

相关论文

共 16 条

[11] OXIDATION OF GLOW-DISCHARGE A-SI-H
PONPON, JP
BOURDON, B
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (09) : 875 - 876
[12] THE DEFECT STRUCTURE OF VITREOUS SIO2-FILMS ON SILICON .3. THE ROLE OF DEFECT STRUCTURE IN THE GROWTH OF SIO2-FILMS
REVESZ, AG
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 107 - 113
[13] KINETICS AND PRESSURE DEPENDENCE OF SURFACE CONTROLLED METAL OXIDATION REACTIONS
RITCHIE, IM
HUNT, GL
[J]. SURFACE SCIENCE, 1969, 15 (03) : 524 - &
[14] CHANGES IN PHASE AND AMPLITUDE OF POLARIZED LIGHT REFLECTED FROM A FILM-COVERED SURFACE AND THEIR RELATIONS WITH FILM THICKNESS
SAXENA, AN
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1965, 55 (09) : 1061 - &
[15] ELECTRICAL, STRUCTURAL, AND BONDING CHANGES INDUCED IN SILICON BY H, AR, AND KR ION-BEAM ETCHING
SINGH, R
FONASH, SJ
ASHOK, S
CAPLAN, PJ
SHAPPIRIO, J
HAGEALI, M
PONPON, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 334 - 336
[16] PROPERTIES OF THE CONTACT ON ION CLEANED N-TYPE AND P-TYPE SILICON SURFACES
VIEUJOTTESTEMALE, E
PALAU, JM
ISMAIL, A
LASSABATERE, L
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (04) : 325 - 331