PROPERTIES OF THE CONTACT ON ION CLEANED N-TYPE AND P-TYPE SILICON SURFACES

被引：11

作者：

VIEUJOTTESTEMALE, E

PALAU, JM

ISMAIL, A

LASSABATERE, L

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(83)90131-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：325 / 331

页数：7

共 31 条

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