EFFECT OF LOW-SOLUBILITY SURFACE-LAYER ON DEVELOPMENT OF AZ-PF514

被引：5

作者：

KRASNOPEROVA, AA

TURNER, SW

OCOLA, L

CERRINA, F

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of prebake conditions on dissolution of Hoechst AG positive chemically amplified resist AZ-PF514 has been studied. It was shown that the dissolution of the resist was nonlinear, with the retardation time strongly dependent on prebake conditions. Plasma etching of the top layer of the resist has been proposed in order to eliminate undesirably long development retardation time of the high temperature baked resist. It was shown that the roughness of the developing resist film was caused by the surface layer of low solubility.

引用

页码：2829 / 2833

页数：5

共 13 条

[1] PERFORMANCE OPTIMIZATION OF THE CHEMICALLY AMPLIFIED RADIATION RESIST RAY-PF [J].

BALLHORN, RU ;

DAMMEL, R ;

DAVID, HH ;

ECKES, C ;

FRICKEDAMM, A ;

KREUER, K ;

PAWLOWSKI, G ;

PRZYBILLA, K .

MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) :73-78

[2] METAL-FREE CHEMICALLY AMPLIFIED POSITIVE RESIST RESOLVING 0.2-MU-M IN X-RAY-LITHOGRAPHY [J].

BAN, H ;

NAKAMURA, J ;

DEGUCHI, K ;

TANAKA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3387-3391

[3] PROCESS CHARACTERISTICS OF AN ALL-ORGANIC CHEMICALLY AMPLIFIED DEEP-ULTRAVIOLET RESIST [J].

CHENG, M ;

NALAMASU, O ;

TIMKO, AG ;

POL, V ;

KOMETANI, JM ;

REICHMANIS, E ;

THOMPSON, LF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3374-3379

[4]

ECKES C, 1991, P SOC PHOTO-OPT INS, V1466, P394, DOI 10.1117/12.46388

[5]

HINSBERG WD, 1992, SPIE ADV RESIST TECH, V9, P24

[6]

ITO H, 1984, ACS SYM SER, V242, P11

[7]

KUMADA T, IN PRESS P SPIE

[8]

NALAMASU O, 1991, P SOC PHOTO-OPT INS, V1466, P13, DOI 10.1117/12.46355

[9] DETERMINATION OF ACID DIFFUSION IN CHEMICAL AMPLIFICATION POSITIVE DEEP ULTRAVIOLET RESISTS [J].

SCHLEGEL, L ;

UENO, T ;

HAYASHI, N ;

IWAYANAGI, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :278-289

[10] PROCESS-CONTROL WITH CHEMICAL AMPLIFICATION RESISTS USING DEEP ULTRAVIOLET AND X-RAY-RADIATION [J].

SELIGSON, D ;

DAS, S ;

GAW, H ;

PIANETTA, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2303-2307

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