Backscattering spectrometry was used to investigate composition changes and sputtering yields of the chromium silicide as a function of temperature. Objective was to determine if the onset of enhanced diffusion, as it has been observed in ion mixing of a thin Cr film on Si, has any effect on subsurface composition and sputtering yields of CrSi//2. Backscattering spectrometry is also used to obtain angular distributions of sputtered fluxes from carbon catcher foils used during irradiations. Yields obtained from angular distributions are compared with yields obtained from changes in the areal densities of sputtered targets.