CORRELATED ROUGHNESS IN (GE(M)/SI(N))P SUPERLATTICES ON SI(100)

被引：32

作者：

HEADRICK, RL

BARIBEAU, JM

机构：

[1] CORNELL UNIV,DEPT APPL & ENGN PHYS,ITHACA,NY 14853

[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.9174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used high-resolution x-ray reflectivity to determine the interface microstructure in a (Ge(m)/Si(n))p superlattice grown at 350-degrees-C. In-plane correlation of roughness is observed, causing a distinct splitting of superlattice peaks in transverse rocking scans. Different interfaces are not independent, but rather the terrace structure of the substrate is identically replicated, forming a superlattice with vertically correlated (conformal) interface roughness. This is a result of limited lateral migration of deposited Si and Ge atoms during the low-temperature growth process.

引用

页码：9174 / 9177

页数：4