GROWTH AND STRUCTURE OF RAPID THERMAL SILICON-OXIDES AND NITROXIDES STUDIED BY SPECTROELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY

Rapid thermal oxidation of Czochralski-grown silicon in either O-2 or N2O atmospheres have been studied using spectroellipsometry and Auger electron spectroscopy. Multiwavelength ellipsometric data were processed in order to separately derive the thicknesses and refractive indexes of rapid thermal dielectrics. Results revealed a significant increase of the mean refractive index as the film thickness falls below 20 nm for both O-2 or N2O oxidant species. A multilayer structure including an about 0.3-nm-thick interfacial region of either SiOx or nitroxide in the case of O-2 and N2O growth, respectively, followed by a densified SiO2 layer, was found to accurately fit the experimental data. The interfacial region together with the densified state of SiO2 close to the interface suggest a dielectric structure in agreement with the continuous random network model proposed for classical thermal oxides. Auger electron spectroscopy analysis confirmed the presence of noncrystalline Si-Si bonds in the interfacial region, mostly in the case of thin oxides grown in O-2. It was speculated that the initial fast growth regime was due to a transient oxygen supersaturation in the interfacial region. Besides, the self-limiting growth in N2O was confirmed and explained in agreement with several recently published data, by the early formation of a very thin nitride or oxynitride membrane in the highly densified oxide beneath the interface. The beneficial effect of direct nitrogen incorporation by rapid thermal oxidation in N2O instead of O-2 for the electrical behavior of metal-oxide-semiconductor capacitors is likely a better SiO2/Si lattice accommodation through the reduction of stresses and Si-Si bonds in the interfacial region of the dielectric.