TEMPERATURE-DEPENDENT LIGHT-INDUCED CONDUCTIVITY CHANGES IN HYDROGENATED AMORPHOUS-SILICON

被引:15
作者
JANG, J [1 ]
LEE, CC [1 ]
机构
[1] HARVARD UNIV,DEPT APPL SCI,CAMBRIDGE,MA 02138
关键词
D O I
10.1063/1.332570
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:3943 / 3950
页数:8
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共 25 条
[1]  
AKER B, UNPUB
[2]   TRANSPORT-PROPERTIES OF A-SI - H ALLOYS PREPARED BY RF SPUTTERING-I [J].
ANDERSON, DA ;
PAUL, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (02) :187-213
[3]   EFFECT OF GAP STATE DENSITY ON THE PHOTOCONDUCTIVITY AND PHOTO-LUMINESCENCE OF ALPHA-SI-H [J].
ANDERSON, DA ;
MODDEL, G ;
COLLINS, RW ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1979, 31 (09) :677-681
[4]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[5]   STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP ;
SERGENT, AM .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :371-374
[6]  
DERSCH H, 1981, APPL PHYS LETT, V38, P465
[7]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[8]   EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J].
GOODMAN, NB .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04) :407-434
[9]   EFFECT OF DISCHARGE CONDITIONS ON CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY DC GLOW-DISCHARGE DECOMPOSITION [J].
JANG, J ;
LEE, C .
SOLAR ENERGY MATERIALS, 1982, 7 (03) :377-384
[10]   EFFECT OF PREPARATION CONDITION ON CONDUCTIVITY ACTIVATION-ENERGY AND DOWNWARD CONDUCTIVITY KINK OF UNDOPED HYDROGENATED AMORPHOUS-SILICON [J].
JANG, J ;
LEE, C .
SOLID STATE COMMUNICATIONS, 1982, 44 (07) :1123-1126