PERSISTENT PHOTOIONIZATION OF THE DX-CENTER IN TE-IMPLANTED GAAS

被引：3

作者：

BEMELMANS, H ^{[1
]}

BORGHS, G ^{[1
]}

LANGOUCHE, G ^{[1
]}

机构：

[1] INTERUNIV INST MICROELECTR,B-3001 HEVERLEE,BELGIUM

来源：

HYPERFINE INTERACTIONS | 1992年 / 70卷 / 1-4期

关键词：

D O I：

10.1007/BF02397475

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Mossbauer measurements were performed on GaAs implanted with Te-129m-isotopes. A defect configuration is observed which is characterized by a large electric field gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called "DX-center". The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.

引用

页码：909 / 912

页数：4

共 12 条

[1] MOSSBAUER STUDY OF THE DEFECT STRUCTURES AROUND TE IMPLANTED IN ALXGA1-XAS [J].