NUMERICAL STUDY OF ELECTROSTATIC PROPERTIES OF METAL SEMIINSULATING GAAS CONTACTS

被引：2

作者：

CHEN, TP

LIU, YC

FUNG, S

BELING, CD

机构：

[1] Department of Physics, University of Hong Kong

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 04期

关键词：

SEMICONDUCTORS; SURFACES AND INTERFACES;

D O I：

10.1016/0038-1098(95)00057-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A numerical simulation of the electrostatic properties of metal / semi - insulating GaAs contacts has been carried out for different surface potentials at different temperatures. Specific results have been obtained for the three most common compensation mechanisms within the semi - insulating GaAs material: (a) a deep donor and a shallow acceptor, (b) a shallow donor and a deep acceptor, and (c) a deep donor and a deep acceptor. These results are compared to those from the one - sided Schottky abrupt junction model, and some discussions on the correlation of the electrostatic properties with Schottky barrier formation are presented.

引用

页码：287 / 291

页数：5

共 13 条

[1]

AU HL, 1994, IN PRESS PHYS REV LE

[2] X-RAY-DETECTORS BASED ON SEMIINSULATING GAAS SUBSTRATE [J].