IMPROVEMENT IN GAAS-MESFET PERFORMANCE DUE TO PIEZOELECTRIC EFFECT

[1] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1377 - 1380

[2] BLAAW C, 1983, J APPL PHYS, V59, P5064

[3] ROLE OF THE PIEZOELECTRIC EFFECT IN DEVICE UNIFORMITY OF GAAS INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 279 - 281

[4] EDEN RC, 1978, DEC IEDM, P6

[5] HEMMENT PL, 1976, I PHYS C SER, V28, P44

[6] HIRAYAMA M, 1984, FEB ISSCC, P46

[7] INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT) [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 417 - 419

[8] PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4567 - 4579

[9] ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 311 - 313

[10] COMPARISON OF THE ORIENTATION EFFECT OF SIO2-ENCAPSULATEED AND SI3N4-ENCAPSULATED GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 172 - 174

[1] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1377 - 1380

[2] BLAAW C, 1983, J APPL PHYS, V59, P5064

[3] ROLE OF THE PIEZOELECTRIC EFFECT IN DEVICE UNIFORMITY OF GAAS INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 279 - 281

[4] EDEN RC, 1978, DEC IEDM, P6

[5] HEMMENT PL, 1976, I PHYS C SER, V28, P44

[6] HIRAYAMA M, 1984, FEB ISSCC, P46

[7] INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT) [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 417 - 419

[8] PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4567 - 4579

[9] ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 311 - 313

[10] COMPARISON OF THE ORIENTATION EFFECT OF SIO2-ENCAPSULATEED AND SI3N4-ENCAPSULATED GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 172 - 174