CONTACTLESS TUNNELING TO SEMICONDUCTORS

被引：5

作者：

SONNENFELD, R ^{[1
]}

MORELAND, J ^{[1
]}

HANSMA, PK ^{[1
]}

ADAMS, A ^{[1
]}

KVAAS, R ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93117

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：392 / 396

页数：5

共 26 条

[1]

ANDO T, 1982, REV MOD PHYS, V54, P2

[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123

[3] TUNNELING THROUGH A CONTROLLABLE VACUUM GAP [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :178-180

[4] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].

BINNING, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61

[5] FIELD-EFFECT TRANSISTOR SENSITIVE TO DIPOLAR MOLECULES [J].

BLACKBURN, GF ;

LEVY, M ;

JANATA, J .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :700-701

[6] AL P-SILICON MOS PHOTOVOLTAIC CELL [J].

CHARLSON, EJ ;

LIEN, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3982-3987

[7] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J].

DAHLKE, WE ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1967, 10 (08) :865-&

[8]

DOUGLASS DH, 1964, PROGR LOW TEMP PHYS, V4, P144

[9]

FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P161

[10] ELECTRON TUNNELING AND SUPERCONDUCTIVITY [J].

GIAEVER, I .

REVIEWS OF MODERN PHYSICS, 1974, 46 (02) :245-250

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