SOME CHARACTERISTICS OF IN-DIFFUSED CUINSE2 HOMOJUNCTIONS

被引:19
作者
SHIH, I
SHAHIDI, AV
CHAMPNESS, CH
机构
关键词
D O I
10.1063/1.333981
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:421 / 423
页数:3
相关论文
共 12 条
  • [1] PHOTODETECTING PROPERTIES OF CUINSE2 HOMOJUNCTIONS
    GONZALEZ, J
    RINCON, C
    REDONDO, A
    NEGRETE, P
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 29 - 32
  • [2] KAZMERSKI LL, 1977, I PHYS C SER, V35, P217
  • [3] ANALYSIS OF ELECTRICAL AND LUMINESCENT PROPERTIES OF CULNSE2
    MIGLIORATO, P
    SHAY, JL
    KASPER, HM
    WAGNER, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1777 - 1782
  • [4] JUNCTION ELECTROLUMINESCENCE IN CULNSE2
    MIGLIORATO, P
    TELL, B
    SHAY, JL
    KASPER, HM
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (05) : 227 - 228
  • [5] ELECTRICAL PROPERTIES OF CU IN SE2 SINGLE-CRYSTALS
    PARKES, J
    TOMLINSON, RD
    HAMPSHIRE, MJ
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 773 - 777
  • [6] SZE SM, 1981, PHYS SEMICONDUCTOR D, P850
  • [7] PHOTOVOLTAIC PROPERTIES AND JUNCTION FORMATION IN CULNSE2
    TELL, B
    BRIDENBAUGH, PM
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2477 - 2480
  • [8] MOTION OF P-N-JUNCTIONS IN CULNSE2
    TELL, B
    WAGNER, S
    BRIDENBAUGH, PM
    [J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 454 - 455
  • [9] HOMOJUNCTION FABRICATION IN CULNSE2 BY COPPER DIFFUSION
    TOMLINSON, RD
    ELLIOTT, E
    PARKES, J
    HAMPSHIRE, MJ
    [J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 383 - 383
  • [10] ELECTROLUMINESCENCE IN BR-IMPLANTED, CL-IMPLANTED, AND ZN-IMPLANTED CULNSE2 P-N-JUNCTION DIODES
    YU, PW
    PARK, YS
    GRANT, JT
    [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 214 - 216