ELECTRICAL CHARACTERISTICS OF GAAS LPE SCHOTTKY DIODES

被引：1

作者：

KONAKOVA, RV ^{[1
]}

TKHORIK, YA ^{[1
]}

ZAITSEVSKII, IL ^{[1
]}

BENC, V ^{[1
]}

MORVIC, M ^{[1
]}

KORDOS, P ^{[1
]}

CERVENAK, J ^{[1
]}

机构：

[1] SAV, ELEKTROTECH USTAV, BRATISLAVA, CZECHOSLOVAKIA

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1983年 / 18卷 / 11期

关键词：

D O I：

10.1002/crat.2170181131

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1451 / 1456

页数：6

共 10 条

[1]

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[2]

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[4] MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES [J].

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[5]

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[6] X-BAND GAAS DOUBLE-DRIFT IMPATT DEVICES [J].

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[7] CHARACTERIZATION OF INXGA1-XAS1-YPY EPITAXIAL LAYERS AND RELATION TO LATTICE MATCHING [J].

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[8]

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[9] STRUCTURE DEFECTS INVESTIGATION OF GAAS AND ALXGA1-XAS EPITAXIAL LAYERS [J].

VASILEVSKAYA, VN ;

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TKHORIK, YA .

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[10] STUDY OF MICROPLASMA BREAKDOWN IN SCHOTTKY-BARRIER DIODES BY MEANS OF A MODULATION METHOD [J].

ZAITSEVSKIJ, IL ;

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SHAKHOVTSOV, VI ;

TKHORIK, YA .

SOLID-STATE ELECTRONICS, 1980, 23 (04) :401-403

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